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breakdown voltage

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breakdown voltage 擊穿電壓。

擊穿電壓。 “breakdown“ 中文翻譯：   n. 1.崩潰，倒塌；破損，損耗；損傷；損壞，故障；失敗 ...“voltage“ 中文翻譯：   n. 【電學】電壓，電壓量，伏特數。 the worki ...“voltage breakdown“ 中文翻譯：   崩潰電壓; 電壓崩潰; 電壓急降; 擊穿電壓“anode breakdown voltage“ 中文翻譯：   陽極崩潰; 陽極擊穿電壓“asymptotic breakdown voltage“ 中文翻譯：   漸近崩潰電壓; 接近擊穿電壓“avalanche breakdown voltage“ 中文翻譯：   雪崩嘩電壓“bdv breakdown voltage“ 中文翻譯：   擊穿電壓“breakdown reverse voltage“ 中文翻譯：   反向擊穿電壓“breakdown voltage meter“ 中文翻譯：   耐電壓表“breakdown voltage rating“ 中文翻譯：   絕緣強度“bv breakdown voltage“ 中文翻譯：   擊穿電壓“collector breakdown voltage“ 中文翻譯：   集電極穿電壓; 集電極擊穿電壓; 集極擊穿電壓“dc breakdown voltage“ 中文翻譯：   直倆電壓“dielectric breakdown voltage“ 中文翻譯：   電介質嘩電壓; 介電擊穿電壓; 介質崩潰電壓“dielectrie breakdown voltage“ 中文翻譯：   介質崩潰電壓介質擊穿電壓“diode reverse breakdown voltage“ 中文翻譯：   二極管反向擊穿電壓“drain breakdown voltage“ 中文翻譯：   漏擊穿電壓; 漏極擊穿電壓“drain gate breakdown voltage“ 中文翻譯：   漏柵極擊穿電壓“drain source breakdown voltage“ 中文翻譯：   漏源擊穿電壓; 漏源極擊穿電壓“electric breakdown voltage“ 中文翻譯：   電擊穿電壓“electrie breakdown voltage“ 中文翻譯：   崩潰電壓“high voltage breakdown“ 中文翻譯：   高壓擊穿“reverse breakdown voltage“ 中文翻譯：   反向嘩電壓; 反向擊穿電壓“reverse voltage breakdown point“ 中文翻譯：   反向電壓擊穿點“reverse-breakdown voltage“ 中文翻譯：   逆向崩潰電壓

breaker

Low voltage control circuits and high voltage ldmos whose breakdown voltage is around 600v are integrated on this monolithic switching power supply chip . the limited current of high voltage ldmos is 250ma . output power of the whole circuit is less than 9w 內部集成低壓控制電路和耐壓600v的高壓ldmos ,最大輸出電流可達250ma ;此單片開關電源輸出功率小于9w ,外圍拓撲結構可采用反激式結構。

In order to improve process quality and increase probability , we optimize ohm contact resistance and breakdown voltage of devices by adjusting process conditions . finally , dc - 500mhz midf switch is fabricated , in which some important conclusions and suggestions are introduced 工藝研究的重點是改進工藝質量，提高成品率，為此我們通過調整工藝條件來優化歐姆接觸電阻和提高器件的擊穿電壓。

With offset fp structure obtained by using our method the device breakdown voltage is higher than flr structure , and this structure can screen the influence of interface charge in part and improve the stability of device performance 用我們的方法設計的偏移場板結構不僅比場限環結構提高了擊穿電壓，而且部分地屏蔽了界面電荷對器件擊穿電壓的影響，提高了器件工作性能的穩定性。

The result of the test for dynamic breakdown characteristics reveal that breakdown voltage increases as the lengths of the pulses applied to the gate and drain electrodes increase . this could be mainly due to the influence of surface states Gaasmesfet動態擊穿特性測試結果表明， gaasmesfet的擊穿電壓隨柵極與漏極上所加脈沖電壓寬度的增大而增大，這主要是因為表面態的原因。

It also put forward that how to select appropriate epilayer doping concentration and thickness , pn junction depth and jte technology to increase the breakdown voltage of 4h - sic mps . a power dissipation model of 4h - sic mps was established 通過對4h - sicmps擊穿特性的二維模擬，提出如何選擇合適的pn結深度、外延層摻雜濃度和厚度以及如何運用jte終端技術來提高擊穿電壓。

Comparing with conventional resurf structure , the novel structure has only half the device length and 1 / 3 of the on - resistance as well as comparable breakdown voltage . we have also done some worked on the soi composite structure 通過將tsoi結構的ldmos與常規resurf結構soi - ldmos的比較，在同等耐壓下采用新型結構的器件長度縮短了1 / 2 ，比導通電阻降低了2 / 3 。

The simulation results indicate , deep - trench junction termination with certain width , depth and filling with isolated dielectric can increase the avalanche breakdown voltage of devices to above 95 % of the ideal value 結果表明：具有一定寬度、深度且填充絕緣介質的深阱結終端結構，阻止了結的橫向擴展，并能將器件的雪崩擊穿電壓提高到理想值的95以上。

Results of study show that inception voltage of electrical tree , breakdown voltage , environmental stress cracking , tensile strength and elongation at break of low density polyethylene are improved after grafting 研究結果表明：接枝聚硅氧烷后，改性的低密度聚乙烯的樹枝引發示性電壓、擊穿場強、耐環境應力開裂性、拉伸強度及斷裂伸長率都得到提高。

Considering the shortcoming of thick epitaxial layer technology , author proposed a thin epitaxial layer ldmos used n - burry layer . through optimizing the n - burry layer ? length and impurity dose will increase the device ? breakdown voltage 針對目前厚外延工藝的缺點，提出的薄外延ldmos采用n埋層，通過優化n埋層長度、注入劑量可提高器件耐壓。

A high voltage power integrated circuit based on soi is developed , which has the following features : the breakdown voltage of power mosfet exceeds 600v , the highest operating frequency is 150 khz , and the largest output current is 1a 論文設計實現了一種基于soi的高壓驅動電路,其性能指標為:耐壓600v ,工作頻率150khz ,最大輸出電流1a 。

Namely , the electric field at the drain - side edge of the gate decreases with the increasing of negative charge density in the surface , so the breakdown voltage of gaas mesfet ' s will increase 表面受主態的增多使表面負電荷密度增大，表面聚集的負電荷可以分散漏側柵邊緣處的電力線密度，減弱了柵靠漏一側的電場強度，擊穿電壓提高。

Comparing with uncovered antennas with the same gap size , the covered antenna has higher breakdown voltage at the same optical exciting power , and it ' s thz out put is 1 . 5 times of uncovered antenna 與未鈍化的光電導偶極天線相比， si3n ;鈍化過的光電導偶極天線耐壓能力顯著提高，其輻射功率約為未鈍化天線的1 . 5倍。

It is showed in this thesis that temperature is very important to single photon detection , but too low temperature is not good for detection because of afterpulse and the breakdown voltage 本文的研究表明，溫度對單光子探測有著非常重要的影響，考慮到后脈沖的影響以及雪崩電壓的變化，溫度并不是越低越好。

Double - stage high - speed vacuum ; quick , high efficiency remove water vapor in oil to enhance dryness level , breakdown voltage , one time filtration effort and reduce oil treatment period 雙級高真空大抽速能快速高效的去除油中的水汽，使油的干燥程度擊穿電壓值一次性過濾效果都大大提高，縮短油處理工期。

The breakdown mechanism of soi ldmos with located charge trenches was analyzed in this thesis . the interface charge model for the breakdown voltage was proposed 本課題分析具有局域電荷槽結構的soildmos的縱向耐壓機理，提出界面電荷耐壓模型，這是迄今為止所見報道的高壓soi器件理想的新模型。

Through the relations of temperature - time , pressure - time and pressure - breakdown voltage , the relation between the breakdown voltage in different stages and time is derived 通過金鹵燈的溫升?時間關系、氣壓?時間關系以及壓力?擊穿電壓的關系,得出了金鹵燈在不同階段的時間?擊穿電壓的關系。

Theory analysis , numerical simulation and experimental result indicated that the surface electric field of the device was more uniform and the breakdown voltage was increased effectively 理論分析、數值模擬和實驗結果表明,該結構可以使表面電場變得更加均勻,有效提高器件擊穿電壓。

The two structure ldmos was compared by simulation with medici software . the result is that their breakdown voltage is almost the same and the thin epitaxial layer ldmos ? ron is lower 通過medici模擬對兩種器件進行比較，結果為兩種器件耐壓相當，薄外延ldmos導通電阻略低。

Interface charge has a profound influence on the breakdown voltage of flr structure . on severe condition it can make the outer flr far from main junction disfunction 界面電荷對場限環終端結構的擊穿電壓影響很大，嚴重的甚至可以使遠離主結的場限環失去作用。